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SIR850DP-T1-GE3

SIR850DP-T1-GE3

For Reference Only

Part Number SIR850DP-T1-GE3
PNEDA Part # SIR850DP-T1-GE3
Description MOSFET N-CH 25V 30A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,528
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 11 - Apr 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIR850DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIR850DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIR850DP-T1-GE3, SIR850DP-T1-GE3 Datasheet (Total Pages: 13, Size: 306.51 KB)
PDFSIR850DP-T1-GE3 Datasheet Cover
SIR850DP-T1-GE3 Datasheet Page 2 SIR850DP-T1-GE3 Datasheet Page 3 SIR850DP-T1-GE3 Datasheet Page 4 SIR850DP-T1-GE3 Datasheet Page 5 SIR850DP-T1-GE3 Datasheet Page 6 SIR850DP-T1-GE3 Datasheet Page 7 SIR850DP-T1-GE3 Datasheet Page 8 SIR850DP-T1-GE3 Datasheet Page 9 SIR850DP-T1-GE3 Datasheet Page 10 SIR850DP-T1-GE3 Datasheet Page 11

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SIR850DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1120pF @ 15V
FET Feature-
Power Dissipation (Max)4.8W (Ta), 41.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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