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SIR770DP-T1-GE3

SIR770DP-T1-GE3

For Reference Only

Part Number SIR770DP-T1-GE3
PNEDA Part # SIR770DP-T1-GE3
Description MOSFET 2N-CH 30V 8A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 59,930
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIR770DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIR770DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIR770DP-T1-GE3, SIR770DP-T1-GE3 Datasheet (Total Pages: 18, Size: 342.23 KB)
PDFSIR770DP-T1-GE3 Datasheet Cover
SIR770DP-T1-GE3 Datasheet Page 2 SIR770DP-T1-GE3 Datasheet Page 3 SIR770DP-T1-GE3 Datasheet Page 4 SIR770DP-T1-GE3 Datasheet Page 5 SIR770DP-T1-GE3 Datasheet Page 6 SIR770DP-T1-GE3 Datasheet Page 7 SIR770DP-T1-GE3 Datasheet Page 8 SIR770DP-T1-GE3 Datasheet Page 9 SIR770DP-T1-GE3 Datasheet Page 10 SIR770DP-T1-GE3 Datasheet Page 11

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SIR770DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8A
Rds On (Max) @ Id, Vgs21mOhm @ 8A, 10V
Vgs(th) (Max) @ Id2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds900pF @ 15V
Power - Max17.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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