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SIR662DP-T1-GE3

SIR662DP-T1-GE3

For Reference Only

Part Number SIR662DP-T1-GE3
PNEDA Part # SIR662DP-T1-GE3
Description MOSFET N-CH 60V 60A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,820
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIR662DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIR662DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIR662DP-T1-GE3, SIR662DP-T1-GE3 Datasheet (Total Pages: 13, Size: 381.21 KB)
PDFSIR662DP-T1-GE3 Datasheet Cover
SIR662DP-T1-GE3 Datasheet Page 2 SIR662DP-T1-GE3 Datasheet Page 3 SIR662DP-T1-GE3 Datasheet Page 4 SIR662DP-T1-GE3 Datasheet Page 5 SIR662DP-T1-GE3 Datasheet Page 6 SIR662DP-T1-GE3 Datasheet Page 7 SIR662DP-T1-GE3 Datasheet Page 8 SIR662DP-T1-GE3 Datasheet Page 9 SIR662DP-T1-GE3 Datasheet Page 10 SIR662DP-T1-GE3 Datasheet Page 11

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SIR662DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs96nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4365pF @ 30V
FET Feature-
Power Dissipation (Max)6.25W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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