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SIR610DP-T1-RE3

SIR610DP-T1-RE3

For Reference Only

Part Number SIR610DP-T1-RE3
PNEDA Part # SIR610DP-T1-RE3
Description MOSFET N-CH 200V 35.4A SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,992
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIR610DP-T1-RE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIR610DP-T1-RE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIR610DP-T1-RE3, SIR610DP-T1-RE3 Datasheet (Total Pages: 13, Size: 412.32 KB)
PDFSIR610DP-T1-RE3 Datasheet Cover
SIR610DP-T1-RE3 Datasheet Page 2 SIR610DP-T1-RE3 Datasheet Page 3 SIR610DP-T1-RE3 Datasheet Page 4 SIR610DP-T1-RE3 Datasheet Page 5 SIR610DP-T1-RE3 Datasheet Page 6 SIR610DP-T1-RE3 Datasheet Page 7 SIR610DP-T1-RE3 Datasheet Page 8 SIR610DP-T1-RE3 Datasheet Page 9 SIR610DP-T1-RE3 Datasheet Page 10 SIR610DP-T1-RE3 Datasheet Page 11

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SIR610DP-T1-RE3 Specifications

ManufacturerVishay Siliconix
SeriesThunderFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C35.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs31.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1380pF @ 100V
FET Feature-
Power Dissipation (Max)104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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