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SIR106DP-T1-RE3

SIR106DP-T1-RE3

For Reference Only

Part Number SIR106DP-T1-RE3
PNEDA Part # SIR106DP-T1-RE3
Description MOSFET N-CHAN 100V POWERPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 25,260
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIR106DP-T1-RE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIR106DP-T1-RE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIR106DP-T1-RE3, SIR106DP-T1-RE3 Datasheet (Total Pages: 13, Size: 380.46 KB)
PDFSIR106DP-T1-RE3 Datasheet Cover
SIR106DP-T1-RE3 Datasheet Page 2 SIR106DP-T1-RE3 Datasheet Page 3 SIR106DP-T1-RE3 Datasheet Page 4 SIR106DP-T1-RE3 Datasheet Page 5 SIR106DP-T1-RE3 Datasheet Page 6 SIR106DP-T1-RE3 Datasheet Page 7 SIR106DP-T1-RE3 Datasheet Page 8 SIR106DP-T1-RE3 Datasheet Page 9 SIR106DP-T1-RE3 Datasheet Page 10 SIR106DP-T1-RE3 Datasheet Page 11

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SIR106DP-T1-RE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C16.1A (Ta), 65.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs64nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3610pF @ 50V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 83.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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