SIP41111DY-T1-E3
For Reference Only
| Part Number | SIP41111DY-T1-E3 |
| PNEDA Part # | SIP41111DY-T1-E3 |
| Description | IC DRIVER HALF-BRIDGE 8-SOIC |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 7,578 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SIP41111DY-T1-E3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SIP41111DY-T1-E3 |
| Category | Semiconductors › Power Management ICs › PMIC - Gate Drivers |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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SIP41111DY-T1-E3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | - |
| Driven Configuration | Half-Bridge |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Voltage - Supply | 9V ~ 13.2V |
| Logic Voltage - VIL, VIH | 4V, 7V |
| Current - Peak Output (Source, Sink) | 2A, 2A |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 75V |
| Rise / Fall Time (Typ) | 13ns, 15ns |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
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Manufacturer NXP USA Inc. Series - Driven Configuration High-Side Channel Type Single Number of Drivers 1 Gate Type N-Channel MOSFET Voltage - Supply 7V ~ 20V Logic Voltage - VIL, VIH 1.5V, 3.5V Current - Peak Output (Source, Sink) - Input Type Non-Inverting High Side Voltage - Max (Bootstrap) - Rise / Fall Time (Typ) 10µs, 280µs Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer IXYS Integrated Circuits Division Series - Driven Configuration Low-Side Channel Type Single Number of Drivers 1 Gate Type IGBT, N-Channel, P-Channel MOSFET Voltage - Supply 12.5V ~ 35V Logic Voltage - VIL, VIH 0.8V, 3.5V Current - Peak Output (Source, Sink) 30A, 30A Input Type Non-Inverting High Side Voltage - Max (Bootstrap) - Rise / Fall Time (Typ) 11ns, 11ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-5 Supplier Device Package TO-220-5 |
Manufacturer Infineon Technologies Series - Driven Configuration Half-Bridge Channel Type Independent Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10V ~ 20V Logic Voltage - VIL, VIH 0.8V, 2.9V Current - Peak Output (Source, Sink) 200mA, 350mA Input Type Non-Inverting High Side Voltage - Max (Bootstrap) 600V Rise / Fall Time (Typ) 150ns, 50ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 14-SOIC (0.154", 3.90mm Width) Supplier Device Package 14-SOIC |
