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SIJA54DP-T1-GE3

SIJA54DP-T1-GE3

For Reference Only

Part Number SIJA54DP-T1-GE3
PNEDA Part # SIJA54DP-T1-GE3
Description MOSFET N-CH 40V 60A PPAK SO-8L
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 101,718
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIJA54DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIJA54DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIJA54DP-T1-GE3, SIJA54DP-T1-GE3 Datasheet (Total Pages: 10, Size: 230.05 KB)
PDFSIJA54DP-T1-GE3 Datasheet Cover
SIJA54DP-T1-GE3 Datasheet Page 2 SIJA54DP-T1-GE3 Datasheet Page 3 SIJA54DP-T1-GE3 Datasheet Page 4 SIJA54DP-T1-GE3 Datasheet Page 5 SIJA54DP-T1-GE3 Datasheet Page 6 SIJA54DP-T1-GE3 Datasheet Page 7 SIJA54DP-T1-GE3 Datasheet Page 8 SIJA54DP-T1-GE3 Datasheet Page 9 SIJA54DP-T1-GE3 Datasheet Page 10

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SIJA54DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.35mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs104nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds5300pF @ 20V
FET Feature-
Power Dissipation (Max)36.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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