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SIHU7N60E-E3

SIHU7N60E-E3

For Reference Only

Part Number SIHU7N60E-E3
PNEDA Part # SIHU7N60E-E3
Description MOSFET N-CH 600V 7A TO-251
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,102
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 19 - Feb 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHU7N60E-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHU7N60E-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHU7N60E-E3, SIHU7N60E-E3 Datasheet (Total Pages: 8, Size: 175.63 KB)
PDFSIHU7N60E-E3 Datasheet Cover
SIHU7N60E-E3 Datasheet Page 2 SIHU7N60E-E3 Datasheet Page 3 SIHU7N60E-E3 Datasheet Page 4 SIHU7N60E-E3 Datasheet Page 5 SIHU7N60E-E3 Datasheet Page 6 SIHU7N60E-E3 Datasheet Page 7 SIHU7N60E-E3 Datasheet Page 8

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SIHU7N60E-E3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds680pF @ 100V
FET Feature-
Power Dissipation (Max)78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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