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SIHJ8N60E-T1-GE3

SIHJ8N60E-T1-GE3

For Reference Only

Part Number SIHJ8N60E-T1-GE3
PNEDA Part # SIHJ8N60E-T1-GE3
Description MOSFET N-CH 600V POWERPAK SO-8L
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,416
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHJ8N60E-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHJ8N60E-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHJ8N60E-T1-GE3, SIHJ8N60E-T1-GE3 Datasheet (Total Pages: 11, Size: 218.87 KB)
PDFSIHJ8N60E-T1-GE3 Datasheet Cover
SIHJ8N60E-T1-GE3 Datasheet Page 2 SIHJ8N60E-T1-GE3 Datasheet Page 3 SIHJ8N60E-T1-GE3 Datasheet Page 4 SIHJ8N60E-T1-GE3 Datasheet Page 5 SIHJ8N60E-T1-GE3 Datasheet Page 6 SIHJ8N60E-T1-GE3 Datasheet Page 7 SIHJ8N60E-T1-GE3 Datasheet Page 8 SIHJ8N60E-T1-GE3 Datasheet Page 9 SIHJ8N60E-T1-GE3 Datasheet Page 10 SIHJ8N60E-T1-GE3 Datasheet Page 11

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SIHJ8N60E-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs520mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds754pF @ 100V
FET Feature-
Power Dissipation (Max)89W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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