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SIHG33N65E-GE3

SIHG33N65E-GE3

For Reference Only

Part Number SIHG33N65E-GE3
PNEDA Part # SIHG33N65E-GE3
Description MOSFET N-CH 650V 32.4A TO-247AC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 16,188
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHG33N65E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHG33N65E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHG33N65E-GE3, SIHG33N65E-GE3 Datasheet (Total Pages: 7, Size: 147.26 KB)
PDFSIHG33N65E-GE3 Datasheet Cover
SIHG33N65E-GE3 Datasheet Page 2 SIHG33N65E-GE3 Datasheet Page 3 SIHG33N65E-GE3 Datasheet Page 4 SIHG33N65E-GE3 Datasheet Page 5 SIHG33N65E-GE3 Datasheet Page 6 SIHG33N65E-GE3 Datasheet Page 7

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SIHG33N65E-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C32.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs105mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs173nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4040pF @ 100V
FET Feature-
Power Dissipation (Max)313W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AC
Package / CaseTO-247-3

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