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SIHG24N65E-E3

SIHG24N65E-E3

For Reference Only

Part Number SIHG24N65E-E3
PNEDA Part # SIHG24N65E-E3
Description MOSFET N-CH 650V 24A TO247AC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,714
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHG24N65E-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHG24N65E-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHG24N65E-E3, SIHG24N65E-E3 Datasheet (Total Pages: 8, Size: 184.06 KB)
PDFSIHG24N65E-E3 Datasheet Cover
SIHG24N65E-E3 Datasheet Page 2 SIHG24N65E-E3 Datasheet Page 3 SIHG24N65E-E3 Datasheet Page 4 SIHG24N65E-E3 Datasheet Page 5 SIHG24N65E-E3 Datasheet Page 6 SIHG24N65E-E3 Datasheet Page 7 SIHG24N65E-E3 Datasheet Page 8

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SIHG24N65E-E3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs145mOhm @ 12A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs122nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2740pF @ 100V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AC
Package / CaseTO-247-3

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