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SIHFR1N60ATR-GE3

SIHFR1N60ATR-GE3

For Reference Only

Part Number SIHFR1N60ATR-GE3
PNEDA Part # SIHFR1N60ATR-GE3
Description MOSFET N-CH 600V 1.4A TO252AA
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,046
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHFR1N60ATR-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHFR1N60ATR-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHFR1N60ATR-GE3, SIHFR1N60ATR-GE3 Datasheet (Total Pages: 11, Size: 243.73 KB)
PDFIRFR1N60ATRRPBF Datasheet Cover
IRFR1N60ATRRPBF Datasheet Page 2 IRFR1N60ATRRPBF Datasheet Page 3 IRFR1N60ATRRPBF Datasheet Page 4 IRFR1N60ATRRPBF Datasheet Page 5 IRFR1N60ATRRPBF Datasheet Page 6 IRFR1N60ATRRPBF Datasheet Page 7 IRFR1N60ATRRPBF Datasheet Page 8 IRFR1N60ATRRPBF Datasheet Page 9 IRFR1N60ATRRPBF Datasheet Page 10 IRFR1N60ATRRPBF Datasheet Page 11

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SIHFR1N60ATR-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7Ohm @ 840mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds229pF @ 25V
FET Feature-
Power Dissipation (Max)36W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-PAK (TO-252AA)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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