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SIHFB11N50A-E3

SIHFB11N50A-E3

For Reference Only

Part Number SIHFB11N50A-E3
PNEDA Part # SIHFB11N50A-E3
Description MOSFET N-CH 500V 11A TO220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,418
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHFB11N50A-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHFB11N50A-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHFB11N50A-E3, SIHFB11N50A-E3 Datasheet (Total Pages: 8, Size: 137.42 KB)
PDFIRFB11N50A Datasheet Cover
IRFB11N50A Datasheet Page 2 IRFB11N50A Datasheet Page 3 IRFB11N50A Datasheet Page 4 IRFB11N50A Datasheet Page 5 IRFB11N50A Datasheet Page 6 IRFB11N50A Datasheet Page 7 IRFB11N50A Datasheet Page 8

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SIHFB11N50A-E3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs520mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs52nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1423pF @ 25V
FET Feature-
Power Dissipation (Max)170W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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