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SIHF12N50C-E3

SIHF12N50C-E3

For Reference Only

Part Number SIHF12N50C-E3
PNEDA Part # SIHF12N50C-E3
Description MOSFET N-CH 500V 12A TO-220
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 20,868
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHF12N50C-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHF12N50C-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHF12N50C-E3, SIHF12N50C-E3 Datasheet (Total Pages: 10, Size: 322.77 KB)
PDFSIHB12N50C-E3 Datasheet Cover
SIHB12N50C-E3 Datasheet Page 2 SIHB12N50C-E3 Datasheet Page 3 SIHB12N50C-E3 Datasheet Page 4 SIHB12N50C-E3 Datasheet Page 5 SIHB12N50C-E3 Datasheet Page 6 SIHB12N50C-E3 Datasheet Page 7 SIHB12N50C-E3 Datasheet Page 8 SIHB12N50C-E3 Datasheet Page 9 SIHB12N50C-E3 Datasheet Page 10

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SIHF12N50C-E3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs555mOhm @ 4A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs48nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1375pF @ 25V
FET Feature-
Power Dissipation (Max)36W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220 Full Pack
Package / CaseTO-220-3 Full Pack

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