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SIHD7N60E-GE3

SIHD7N60E-GE3

For Reference Only

Part Number SIHD7N60E-GE3
PNEDA Part # SIHD7N60E-GE3
Description MOSFET N-CH 600V 7A TO-252
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 14,418
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHD7N60E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHD7N60E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHD7N60E-GE3, SIHD7N60E-GE3 Datasheet (Total Pages: 10, Size: 218.21 KB)
PDFSIHD7N60E-E3 Datasheet Cover
SIHD7N60E-E3 Datasheet Page 2 SIHD7N60E-E3 Datasheet Page 3 SIHD7N60E-E3 Datasheet Page 4 SIHD7N60E-E3 Datasheet Page 5 SIHD7N60E-E3 Datasheet Page 6 SIHD7N60E-E3 Datasheet Page 7 SIHD7N60E-E3 Datasheet Page 8 SIHD7N60E-E3 Datasheet Page 9 SIHD7N60E-E3 Datasheet Page 10

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SIHD7N60E-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds680pF @ 100V
FET Feature-
Power Dissipation (Max)78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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