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SIHD5N50D-E3

SIHD5N50D-E3

For Reference Only

Part Number SIHD5N50D-E3
PNEDA Part # SIHD5N50D-E3
Description MOSFET N-CH 500V 5.3A TO252 DPK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 23,658
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHD5N50D-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHD5N50D-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHD5N50D-E3, SIHD5N50D-E3 Datasheet (Total Pages: 9, Size: 186.92 KB)
PDFSIHD5N50D-E3 Datasheet Cover
SIHD5N50D-E3 Datasheet Page 2 SIHD5N50D-E3 Datasheet Page 3 SIHD5N50D-E3 Datasheet Page 4 SIHD5N50D-E3 Datasheet Page 5 SIHD5N50D-E3 Datasheet Page 6 SIHD5N50D-E3 Datasheet Page 7 SIHD5N50D-E3 Datasheet Page 8 SIHD5N50D-E3 Datasheet Page 9

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SIHD5N50D-E3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds325pF @ 100V
FET Feature-
Power Dissipation (Max)104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-PAK (TO-252AA)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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