SIGC57T120R3LEX1SA3
For Reference Only
| Part Number | SIGC57T120R3LEX1SA3 |
| PNEDA Part # | SIGC57T120R3LEX1SA3 |
| Description | IGBT 1200V 50A DIE |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 3,186 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 5 - Apr 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SIGC57T120R3LEX1SA3 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | SIGC57T120R3LEX1SA3 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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SIGC57T120R3LEX1SA3 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | - |
| Current - Collector Pulsed (Icm) | 150A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Power - Max | - |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | - |
| Td (on/off) @ 25°C | - |
| Test Condition | - |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
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Manufacturer Infineon Technologies Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 6.2A Current - Collector Pulsed (Icm) 9.6A Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 2A Power - Max 62W Switching Energy 220µJ Input Type Standard Gate Charge 11nC Td (on/off) @ 25°C 23ns/260ns Test Condition 800V, 2A, 91Ohm, 15V Reverse Recovery Time (trr) 50ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package PG-TO220-3 |
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