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SIE836DF-T1-GE3

SIE836DF-T1-GE3

For Reference Only

Part Number SIE836DF-T1-GE3
PNEDA Part # SIE836DF-T1-GE3
Description MOSFET N-CH 200V 18.3A POLARPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,150
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIE836DF-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIE836DF-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIE836DF-T1-GE3, SIE836DF-T1-GE3 Datasheet (Total Pages: 7, Size: 137.61 KB)
PDFSIE836DF-T1-E3 Datasheet Cover
SIE836DF-T1-E3 Datasheet Page 2 SIE836DF-T1-E3 Datasheet Page 3 SIE836DF-T1-E3 Datasheet Page 4 SIE836DF-T1-E3 Datasheet Page 5 SIE836DF-T1-E3 Datasheet Page 6 SIE836DF-T1-E3 Datasheet Page 7

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SIE836DF-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs130mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 100V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package10-PolarPAK® (SH)
Package / Case10-PolarPAK® (SH)

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