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SIE822DF-T1-E3

SIE822DF-T1-E3

For Reference Only

Part Number SIE822DF-T1-E3
PNEDA Part # SIE822DF-T1-E3
Description MOSFET N-CH 20V 50A 10-POLARPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,790
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIE822DF-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIE822DF-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIE822DF-T1-E3, SIE822DF-T1-E3 Datasheet (Total Pages: 10, Size: 177.95 KB)
PDFSIE822DF-T1-E3 Datasheet Cover
SIE822DF-T1-E3 Datasheet Page 2 SIE822DF-T1-E3 Datasheet Page 3 SIE822DF-T1-E3 Datasheet Page 4 SIE822DF-T1-E3 Datasheet Page 5 SIE822DF-T1-E3 Datasheet Page 6 SIE822DF-T1-E3 Datasheet Page 7 SIE822DF-T1-E3 Datasheet Page 8 SIE822DF-T1-E3 Datasheet Page 9 SIE822DF-T1-E3 Datasheet Page 10

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SIE822DF-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.4mOhm @ 18.3A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs78nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4200pF @ 10V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package10-PolarPAK® (S)
Package / Case10-PolarPAK® (S)

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