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SIE808DF-T1-E3

SIE808DF-T1-E3

For Reference Only

Part Number SIE808DF-T1-E3
PNEDA Part # SIE808DF-T1-E3
Description MOSFET N-CH 20V 60A 10-POLARPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,790
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIE808DF-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIE808DF-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIE808DF-T1-E3, SIE808DF-T1-E3 Datasheet (Total Pages: 10, Size: 191.7 KB)
PDFSIE808DF-T1-GE3 Datasheet Cover
SIE808DF-T1-GE3 Datasheet Page 2 SIE808DF-T1-GE3 Datasheet Page 3 SIE808DF-T1-GE3 Datasheet Page 4 SIE808DF-T1-GE3 Datasheet Page 5 SIE808DF-T1-GE3 Datasheet Page 6 SIE808DF-T1-GE3 Datasheet Page 7 SIE808DF-T1-GE3 Datasheet Page 8 SIE808DF-T1-GE3 Datasheet Page 9 SIE808DF-T1-GE3 Datasheet Page 10

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SIE808DF-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs155nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8800pF @ 10V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package10-PolarPAK® (L)
Package / Case10-PolarPAK® (L)

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