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SIE806DF-T1-GE3

SIE806DF-T1-GE3

For Reference Only

Part Number SIE806DF-T1-GE3
PNEDA Part # SIE806DF-T1-GE3
Description MOSFET N-CH 30V 60A POLARPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,436
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIE806DF-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIE806DF-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIE806DF-T1-GE3, SIE806DF-T1-GE3 Datasheet (Total Pages: 7, Size: 122.9 KB)
PDFSIE806DF-T1-GE3 Datasheet Cover
SIE806DF-T1-GE3 Datasheet Page 2 SIE806DF-T1-GE3 Datasheet Page 3 SIE806DF-T1-GE3 Datasheet Page 4 SIE806DF-T1-GE3 Datasheet Page 5 SIE806DF-T1-GE3 Datasheet Page 6 SIE806DF-T1-GE3 Datasheet Page 7

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SIE806DF-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs250nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds13000pF @ 15V
FET Feature-
Power Dissipation (Max)5.2W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package10-PolarPAK® (L)
Package / Case10-PolarPAK® (L)

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