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SIDR622DP-T1-GE3

SIDR622DP-T1-GE3

For Reference Only

Part Number SIDR622DP-T1-GE3
PNEDA Part # SIDR622DP-T1-GE3
Description MOSFET N-CHAN 150V
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,984
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIDR622DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIDR622DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIDR622DP-T1-GE3, SIDR622DP-T1-GE3 Datasheet (Total Pages: 9, Size: 229.95 KB)
PDFSIDR622DP-T1-GE3 Datasheet Cover
SIDR622DP-T1-GE3 Datasheet Page 2 SIDR622DP-T1-GE3 Datasheet Page 3 SIDR622DP-T1-GE3 Datasheet Page 4 SIDR622DP-T1-GE3 Datasheet Page 5 SIDR622DP-T1-GE3 Datasheet Page 6 SIDR622DP-T1-GE3 Datasheet Page 7 SIDR622DP-T1-GE3 Datasheet Page 8 SIDR622DP-T1-GE3 Datasheet Page 9

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SIDR622DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C64.6A (Ta), 56.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs17.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1516pF @ 75V
FET Feature-
Power Dissipation (Max)6.25W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8DC
Package / CasePowerPAK® SO-8

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