SIDC23D120E6X1SA1
For Reference Only
| Part Number | SIDC23D120E6X1SA1 |
| PNEDA Part # | SIDC23D120E6X1SA1 |
| Description | DIODE GEN PURP 1.2KV 25A WAFER |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,158 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 21 - Mar 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SIDC23D120E6X1SA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | SIDC23D120E6X1SA1 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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SIDC23D120E6X1SA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200V |
| Current - Average Rectified (Io) | 25A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.9V @ 25A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 27µA @ 1200V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer Microsemi Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 60A Voltage - Forward (Vf) (Max) @ If 2.5V @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 280ns Current - Reverse Leakage @ Vr 250µA @ 1000V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package D3 [S] Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 500mA Voltage - Forward (Vf) (Max) @ If 550mV @ 500mA Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 30V Capacitance @ Vr, F 110pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-204AL, DO-41, Axial Supplier Device Package DO-204AL (DO-41) Operating Temperature - Junction -55°C ~ 125°C |
