SIDC07D60AF6X1SA1
For Reference Only
| Part Number | SIDC07D60AF6X1SA1 |
| PNEDA Part # | SIDC07D60AF6X1SA1 |
| Description | DIODE GEN PURP 600V 22.5A WAFER |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,610 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SIDC07D60AF6X1SA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | SIDC07D60AF6X1SA1 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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SIDC07D60AF6X1SA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 22.5A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.6V @ 22.5A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 27µA @ 600V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -40°C ~ 150°C |
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Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 1.7V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 75ns Current - Reverse Leakage @ Vr 10µA @ 1000V Capacitance @ Vr, F 35pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-201AD, Axial Supplier Device Package DO-201AD Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 550mV @ 12A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 40V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case DO-201AD, Axial Supplier Device Package DO-201AD Operating Temperature - Junction -50°C ~ 150°C |
Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 30A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 30A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 1.1mA @ 650V Capacitance @ Vr, F 860pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package PG-TO247-3 Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101 Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 3µs Current - Reverse Leakage @ Vr 5µA @ 400V Capacitance @ Vr, F 8pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-204AL, DO-41, Axial Supplier Device Package DO-204AL (DO-41) Operating Temperature - Junction -65°C ~ 175°C |
