Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIB911DK-T1-GE3

SIB911DK-T1-GE3

For Reference Only

Part Number SIB911DK-T1-GE3
PNEDA Part # SIB911DK-T1-GE3
Description MOSFET 2P-CH 20V 2.6A SC75-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,798
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIB911DK-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIB911DK-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIB911DK-T1-GE3, SIB911DK-T1-GE3 Datasheet (Total Pages: 7, Size: 137.28 KB)
PDFSIB911DK-T1-GE3 Datasheet Cover
SIB911DK-T1-GE3 Datasheet Page 2 SIB911DK-T1-GE3 Datasheet Page 3 SIB911DK-T1-GE3 Datasheet Page 4 SIB911DK-T1-GE3 Datasheet Page 5 SIB911DK-T1-GE3 Datasheet Page 6 SIB911DK-T1-GE3 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIB911DK-T1-GE3 Datasheet
  • where to find SIB911DK-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIB911DK-T1-GE3
  • SIB911DK-T1-GE3 PDF Datasheet
  • SIB911DK-T1-GE3 Stock

  • SIB911DK-T1-GE3 Pinout
  • Datasheet SIB911DK-T1-GE3
  • SIB911DK-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIB911DK-T1-GE3 Price
  • SIB911DK-T1-GE3 Distributor

SIB911DK-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.6A
Rds On (Max) @ Id, Vgs295mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds115pF @ 10V
Power - Max3.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-75-6L Dual
Supplier Device PackagePowerPAK® SC-75-6L Dual

The Products You May Be Interested In

FDMD8280

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

11A

Rds On (Max) @ Id, Vgs

8.2mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

3050pF @ 40V

Power - Max

1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

12-PowerWDFN

Supplier Device Package

12-Power3.3x5

IRF7380QTRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

3.6A

Rds On (Max) @ Id, Vgs

73mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

660pF @ 25V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

APTM120H29FG

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 7®

FET Type

4 N-Channel (H-Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C

34A

Rds On (Max) @ Id, Vgs

348mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

5V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

374nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

10300pF @ 25V

Power - Max

780W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP6

Supplier Device Package

SP6

EPC2103

EPC

Manufacturer

EPC

Series

eGaN®

FET Type

2 N-Channel (Half Bridge)

FET Feature

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

28A

Rds On (Max) @ Id, Vgs

5.5mOhm @ 20A, 5V

Vgs(th) (Max) @ Id

2.5V @ 7mA

Gate Charge (Qg) (Max) @ Vgs

6.5nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

760pF @ 40V

Power - Max

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die

BSZ15DC02KDHXTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, HEXFET®

FET Type

N and P-Channel Complementary

FET Feature

Logic Level Gate, 2.5V Drive

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.1A, 3.2A

Rds On (Max) @ Id, Vgs

55mOhm @ 5.1A, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 110µA

Gate Charge (Qg) (Max) @ Vgs

2.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

419pF @ 10V

Power - Max

2.5W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

PG-TSDSON-8-FL

Recently Sold

BAT54-7-F

BAT54-7-F

Diodes Incorporated

DIODE SCHOTTKY 30V 200MA SOT23-3

MAX16808AUI+

MAX16808AUI+

Maxim Integrated

IC LED DRVR WT/RGB BCKLT 28TSSOP

MBR4045PT

MBR4045PT

Diodes Incorporated

DIODE ARRAY SCHOTTKY 45V TO3P

302R29W102KV4E

302R29W102KV4E

Johanson Dielectrics

CAP CER 1000PF 3KV X7R 1808

PIC18F6520-I/PT

PIC18F6520-I/PT

Microchip Technology

IC MCU 8BIT 32KB FLASH 64TQFP

ERJ-M1WSF20MU

ERJ-M1WSF20MU

Panasonic Electronic Components

RES 0.02 OHM 1% 1W 2512

ESD5V0D3-TP

ESD5V0D3-TP

Micro Commercial Co

TVS DIODE 5V 15.5V SOD323

IXGA20N120A3

IXGA20N120A3

IXYS

IGBT 1200V 40A 180W TO263

S25FL208K0RMFI041

S25FL208K0RMFI041

Cypress Semiconductor

IC FLASH 8M SPI 76MHZ 8SOIC

ES2D

ES2D

ON Semiconductor

DIODE GEN PURP 200V 2A DO214AA

D5V0L4B5SO-7

D5V0L4B5SO-7

Diodes Incorporated

TVS DIODE 5V 14V SOT353

STM32H743VIT6

STM32H743VIT6

STMicroelectronics

IC MCU 32BIT 2MB FLASH 100LQFP