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SIA911DJ-T1-E3

SIA911DJ-T1-E3

For Reference Only

Part Number SIA911DJ-T1-E3
PNEDA Part # SIA911DJ-T1-E3
Description MOSFET 2P-CH 20V 4.5A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,518
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA911DJ-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA911DJ-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIA911DJ-T1-E3, SIA911DJ-T1-E3 Datasheet (Total Pages: 7, Size: 109.34 KB)
PDFSIA911DJ-T1-GE3 Datasheet Cover
SIA911DJ-T1-GE3 Datasheet Page 2 SIA911DJ-T1-GE3 Datasheet Page 3 SIA911DJ-T1-GE3 Datasheet Page 4 SIA911DJ-T1-GE3 Datasheet Page 5 SIA911DJ-T1-GE3 Datasheet Page 6 SIA911DJ-T1-GE3 Datasheet Page 7

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SIA911DJ-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.5A
Rds On (Max) @ Id, Vgs94mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12.8nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds355pF @ 10V
Power - Max6.5W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

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Vishay Siliconix

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Logic Level Gate

Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Operating Temperature

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Supplier Device Package

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