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SIA811DJ-T1-E3

SIA811DJ-T1-E3

For Reference Only

Part Number SIA811DJ-T1-E3
PNEDA Part # SIA811DJ-T1-E3
Description MOSFET P-CH 20V 4.5A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,474
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA811DJ-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA811DJ-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIA811DJ-T1-E3, SIA811DJ-T1-E3 Datasheet (Total Pages: 10, Size: 129.25 KB)
PDFSIA811DJ-T1-GE3 Datasheet Cover
SIA811DJ-T1-GE3 Datasheet Page 2 SIA811DJ-T1-GE3 Datasheet Page 3 SIA811DJ-T1-GE3 Datasheet Page 4 SIA811DJ-T1-GE3 Datasheet Page 5 SIA811DJ-T1-GE3 Datasheet Page 6 SIA811DJ-T1-GE3 Datasheet Page 7 SIA811DJ-T1-GE3 Datasheet Page 8 SIA811DJ-T1-GE3 Datasheet Page 9 SIA811DJ-T1-GE3 Datasheet Page 10

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SIA811DJ-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesLITTLE FOOT®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs94mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds355pF @ 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.9W (Ta), 6.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Dual
Package / CasePowerPAK® SC-70-6 Dual

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