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SIA778DJ-T1-GE3

SIA778DJ-T1-GE3

For Reference Only

Part Number SIA778DJ-T1-GE3
PNEDA Part # SIA778DJ-T1-GE3
Description MOSFET 2N-CH 12V/20V SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,892
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA778DJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA778DJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIA778DJ-T1-GE3, SIA778DJ-T1-GE3 Datasheet (Total Pages: 12, Size: 153.18 KB)
PDFSIA778DJ-T1-GE3 Datasheet Cover
SIA778DJ-T1-GE3 Datasheet Page 2 SIA778DJ-T1-GE3 Datasheet Page 3 SIA778DJ-T1-GE3 Datasheet Page 4 SIA778DJ-T1-GE3 Datasheet Page 5 SIA778DJ-T1-GE3 Datasheet Page 6 SIA778DJ-T1-GE3 Datasheet Page 7 SIA778DJ-T1-GE3 Datasheet Page 8 SIA778DJ-T1-GE3 Datasheet Page 9 SIA778DJ-T1-GE3 Datasheet Page 10 SIA778DJ-T1-GE3 Datasheet Page 11

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SIA778DJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V, 20V
Current - Continuous Drain (Id) @ 25°C4.5A, 1.5A
Rds On (Max) @ Id, Vgs29mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds500pF @ 6V
Power - Max6.5W, 5W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

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