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SIA517DJ-T1-GE3

SIA517DJ-T1-GE3

For Reference Only

Part Number SIA517DJ-T1-GE3
PNEDA Part # SIA517DJ-T1-GE3
Description MOSFET N/P-CH 12V 4.5A SC-70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 113,580
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA517DJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA517DJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SIA517DJ-T1-GE3, SIA517DJ-T1-GE3 Datasheet (Total Pages: 14, Size: 322.5 KB)
PDFSIA517DJ-T1-GE3 Datasheet Cover
SIA517DJ-T1-GE3 Datasheet Page 2 SIA517DJ-T1-GE3 Datasheet Page 3 SIA517DJ-T1-GE3 Datasheet Page 4 SIA517DJ-T1-GE3 Datasheet Page 5 SIA517DJ-T1-GE3 Datasheet Page 6 SIA517DJ-T1-GE3 Datasheet Page 7 SIA517DJ-T1-GE3 Datasheet Page 8 SIA517DJ-T1-GE3 Datasheet Page 9 SIA517DJ-T1-GE3 Datasheet Page 10 SIA517DJ-T1-GE3 Datasheet Page 11

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SIA517DJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C4.5A
Rds On (Max) @ Id, Vgs29mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds500pF @ 6V
Power - Max6.5W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SC-70-6 Dual
Supplier Device PackagePowerPAK® SC-70-6 Dual

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

1.25W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

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SC-74, SOT-457

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

1.8W

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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