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SIA466EDJ-T1-GE3

SIA466EDJ-T1-GE3

For Reference Only

Part Number SIA466EDJ-T1-GE3
PNEDA Part # SIA466EDJ-T1-GE3
Description MOSFET N-CH 20V 25A SC-70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 86,196
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA466EDJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA466EDJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIA466EDJ-T1-GE3, SIA466EDJ-T1-GE3 Datasheet (Total Pages: 9, Size: 255.84 KB)
PDFSIA466EDJ-T1-GE3 Datasheet Cover
SIA466EDJ-T1-GE3 Datasheet Page 2 SIA466EDJ-T1-GE3 Datasheet Page 3 SIA466EDJ-T1-GE3 Datasheet Page 4 SIA466EDJ-T1-GE3 Datasheet Page 5 SIA466EDJ-T1-GE3 Datasheet Page 6 SIA466EDJ-T1-GE3 Datasheet Page 7 SIA466EDJ-T1-GE3 Datasheet Page 8 SIA466EDJ-T1-GE3 Datasheet Page 9

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SIA466EDJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds620pF @ 1V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 19.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package / CasePowerPAK® SC-70-6

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