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SIA437DJ-T1-GE3

SIA437DJ-T1-GE3

For Reference Only

Part Number SIA437DJ-T1-GE3
PNEDA Part # SIA437DJ-T1-GE3
Description MOSFET P-CH 20V 29.7A SC70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 261,750
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA437DJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA437DJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIA437DJ-T1-GE3, SIA437DJ-T1-GE3 Datasheet (Total Pages: 9, Size: 258.33 KB)
PDFSIA437DJ-T1-GE3 Datasheet Cover
SIA437DJ-T1-GE3 Datasheet Page 2 SIA437DJ-T1-GE3 Datasheet Page 3 SIA437DJ-T1-GE3 Datasheet Page 4 SIA437DJ-T1-GE3 Datasheet Page 5 SIA437DJ-T1-GE3 Datasheet Page 6 SIA437DJ-T1-GE3 Datasheet Page 7 SIA437DJ-T1-GE3 Datasheet Page 8 SIA437DJ-T1-GE3 Datasheet Page 9

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SIA437DJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C29.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs14.5mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs90nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds2340pF @ 10V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 19W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package / CasePowerPAK® SC-70-6

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