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SIA110DJ-T1-GE3

SIA110DJ-T1-GE3

For Reference Only

Part Number SIA110DJ-T1-GE3
PNEDA Part # SIA110DJ-T1-GE3
Description MOSFET N-CHAN 100V POWERPAK SC-7
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 54,312
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA110DJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA110DJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIA110DJ-T1-GE3, SIA110DJ-T1-GE3 Datasheet (Total Pages: 9, Size: 265.55 KB)
PDFSIA110DJ-T1-GE3 Datasheet Cover
SIA110DJ-T1-GE3 Datasheet Page 2 SIA110DJ-T1-GE3 Datasheet Page 3 SIA110DJ-T1-GE3 Datasheet Page 4 SIA110DJ-T1-GE3 Datasheet Page 5 SIA110DJ-T1-GE3 Datasheet Page 6 SIA110DJ-T1-GE3 Datasheet Page 7 SIA110DJ-T1-GE3 Datasheet Page 8 SIA110DJ-T1-GE3 Datasheet Page 9

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SIA110DJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C5.4A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs55mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds550pF @ 50V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 19W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package / CasePowerPAK® SC-70-6

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