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SI9435BDY-T1-GE3

SI9435BDY-T1-GE3

For Reference Only

Part Number SI9435BDY-T1-GE3
PNEDA Part # SI9435BDY-T1-GE3
Description MOSFET P-CH 30V 4.1A 8-SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,276
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI9435BDY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI9435BDY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI9435BDY-T1-GE3, SI9435BDY-T1-GE3 Datasheet (Total Pages: 8, Size: 177.26 KB)
PDFSI9435BDY-T1-GE3 Datasheet Cover
SI9435BDY-T1-GE3 Datasheet Page 2 SI9435BDY-T1-GE3 Datasheet Page 3 SI9435BDY-T1-GE3 Datasheet Page 4 SI9435BDY-T1-GE3 Datasheet Page 5 SI9435BDY-T1-GE3 Datasheet Page 6 SI9435BDY-T1-GE3 Datasheet Page 7 SI9435BDY-T1-GE3 Datasheet Page 8

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SI9435BDY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs42mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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