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SI8900EDB-T2-E1

SI8900EDB-T2-E1

For Reference Only

Part Number SI8900EDB-T2-E1
PNEDA Part # SI8900EDB-T2-E1
Description MOSFET 2N-CH 20V 5.4A 10-MFP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,830
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI8900EDB-T2-E1 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI8900EDB-T2-E1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI8900EDB-T2-E1, SI8900EDB-T2-E1 Datasheet (Total Pages: 6, Size: 96.5 KB)
PDFSI8900EDB-T2-E1 Datasheet Cover
SI8900EDB-T2-E1 Datasheet Page 2 SI8900EDB-T2-E1 Datasheet Page 3 SI8900EDB-T2-E1 Datasheet Page 4 SI8900EDB-T2-E1 Datasheet Page 5 SI8900EDB-T2-E1 Datasheet Page 6

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SI8900EDB-T2-E1 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C5.4A
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id1V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case10-UFBGA, CSPBGA
Supplier Device Package10-Micro Foot™ CSP (2x5)

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