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SI8416DB-T1-GE3

SI8416DB-T1-GE3

For Reference Only

Part Number SI8416DB-T1-GE3
PNEDA Part # SI8416DB-T1-GE3
Description MOSFET N-CH 8V 16A MICRO
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,798
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI8416DB-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI8416DB-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI8416DB-T1-GE3, SI8416DB-T1-GE3 Datasheet (Total Pages: 8, Size: 168.83 KB)
PDFSI8416DB-T1-GE3 Datasheet Cover
SI8416DB-T1-GE3 Datasheet Page 2 SI8416DB-T1-GE3 Datasheet Page 3 SI8416DB-T1-GE3 Datasheet Page 4 SI8416DB-T1-GE3 Datasheet Page 5 SI8416DB-T1-GE3 Datasheet Page 6 SI8416DB-T1-GE3 Datasheet Page 7 SI8416DB-T1-GE3 Datasheet Page 8

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SI8416DB-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs23mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 4.5V
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds1470pF @ 4V
FET Feature-
Power Dissipation (Max)2.77W (Ta), 13W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-microfoot
Package / Case6-UFBGA

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