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SI7940DP-T1-GE3

SI7940DP-T1-GE3

For Reference Only

Part Number SI7940DP-T1-GE3
PNEDA Part # SI7940DP-T1-GE3
Description MOSFET 2N-CH 12V 7.6A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,940
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7940DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7940DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI7940DP-T1-GE3, SI7940DP-T1-GE3 Datasheet (Total Pages: 12, Size: 300.19 KB)
PDFSI7940DP-T1-E3 Datasheet Cover
SI7940DP-T1-E3 Datasheet Page 2 SI7940DP-T1-E3 Datasheet Page 3 SI7940DP-T1-E3 Datasheet Page 4 SI7940DP-T1-E3 Datasheet Page 5 SI7940DP-T1-E3 Datasheet Page 6 SI7940DP-T1-E3 Datasheet Page 7 SI7940DP-T1-E3 Datasheet Page 8 SI7940DP-T1-E3 Datasheet Page 9 SI7940DP-T1-E3 Datasheet Page 10 SI7940DP-T1-E3 Datasheet Page 11

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SI7940DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C7.6A
Rds On (Max) @ Id, Vgs17mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.4W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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