SI7922DN-T1-GE3
For Reference Only
| Part Number | SI7922DN-T1-GE3 |
| PNEDA Part # | SI7922DN-T1-GE3 |
| Description | MOSFET 2N-CH 100V 1.8A 1212-8 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 1,067,238 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 30 - Apr 4 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI7922DN-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI7922DN-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI7922DN-T1-GE3 Datasheet
- where to find SI7922DN-T1-GE3
- Vishay Siliconix
- Vishay Siliconix SI7922DN-T1-GE3
- SI7922DN-T1-GE3 PDF Datasheet
- SI7922DN-T1-GE3 Stock
- SI7922DN-T1-GE3 Pinout
- Datasheet SI7922DN-T1-GE3
- SI7922DN-T1-GE3 Supplier
- Vishay Siliconix Distributor
- SI7922DN-T1-GE3 Price
- SI7922DN-T1-GE3 Distributor
SI7922DN-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.3W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 Dual |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
The Products You May Be Interested In
|
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 7.1A, 22.6A Rds On (Max) @ Id, Vgs 27mOhm @ 5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 30V Input Capacitance (Ciss) (Max) @ Vds 2127pF @ 25V Power - Max 1.5W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Powerex Inc. Series - FET Type 2 N-Channel (Dual) FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 100A (Tc) Rds On (Max) @ Id, Vgs 25mOhm @ 100A, 20V Vgs(th) (Max) @ Id 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs 500nC @ 20V Input Capacitance (Ciss) (Max) @ Vds 10200pF @ 800V Power - Max 1080W Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module |
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.4A Rds On (Max) @ Id, Vgs 135mOhm @ 1.7A, 4.5V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 260pF @ 15V Power - Max 1.25W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package Micro8™ |
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type 2 N-Channel (Dual) Common Drain FET Feature Standard Drain to Source Voltage (Vdss) 24V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 37nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 3333pF @ 10V Power - Max 1.45W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 4-XFBGA, WLBGA Supplier Device Package X1-WLB1818-4 |
Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.9A Rds On (Max) @ Id, Vgs 120mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 700mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 3.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 299pF @ 15V Power - Max 1.7W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-VDFN Exposed Pad Supplier Device Package 8-MLP (3x2) |
