SI7909DN-T1-E3
For Reference Only
| Part Number | SI7909DN-T1-E3 |
| PNEDA Part # | SI7909DN-T1-E3 |
| Description | MOSFET 2P-CH 12V 5.3A 1212-8 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 5,688 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 3 - Apr 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI7909DN-T1-E3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI7909DN-T1-E3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI7909DN-T1-E3 Datasheet
- where to find SI7909DN-T1-E3
- Vishay Siliconix
- Vishay Siliconix SI7909DN-T1-E3
- SI7909DN-T1-E3 PDF Datasheet
- SI7909DN-T1-E3 Stock
- SI7909DN-T1-E3 Pinout
- Datasheet SI7909DN-T1-E3
- SI7909DN-T1-E3 Supplier
- Vishay Siliconix Distributor
- SI7909DN-T1-E3 Price
- SI7909DN-T1-E3 Distributor
SI7909DN-T1-E3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 7.7A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.3W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 Dual |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series PowerTrench® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 10A Rds On (Max) @ Id, Vgs 23mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 1610pF @ 10V Power - Max 900mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerVDFN Supplier Device Package 8-MLP (3x3) |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101, PowerTrench® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 9.4A Rds On (Max) @ Id, Vgs 14mOhm @ 9.4A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 1821pF @ 10V Power - Max 900mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) Common Drain FET Feature Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.6W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 4-XFBGA, WLCSP Supplier Device Package 4-WLCSP (1.26x1.26) |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel, Common Drain FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.4A, 4.5A Rds On (Max) @ Id, Vgs 35mOhm @ 7.7A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.6W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® 1212-8 Dual Supplier Device Package PowerPAK® 1212-8 Dual |
Manufacturer Infineon Technologies Series CoolSiC™+ FET Type 2 N-Channel (Dual) FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 50A Rds On (Max) @ Id, Vgs 23mOhm @ 50A, 15V Vgs(th) (Max) @ Id 5.5V @ 20mA Gate Charge (Qg) (Max) @ Vgs 125nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 3950pF @ 800V Power - Max 20mW Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module |
