SI7909DN-T1-E3
For Reference Only
| Part Number | SI7909DN-T1-E3 |
| PNEDA Part # | SI7909DN-T1-E3 |
| Description | MOSFET 2P-CH 12V 5.3A 1212-8 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 5,688 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI7909DN-T1-E3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI7909DN-T1-E3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI7909DN-T1-E3 Datasheet
- where to find SI7909DN-T1-E3
- Vishay Siliconix
- Vishay Siliconix SI7909DN-T1-E3
- SI7909DN-T1-E3 PDF Datasheet
- SI7909DN-T1-E3 Stock
- SI7909DN-T1-E3 Pinout
- Datasheet SI7909DN-T1-E3
- SI7909DN-T1-E3 Supplier
- Vishay Siliconix Distributor
- SI7909DN-T1-E3 Price
- SI7909DN-T1-E3 Distributor
SI7909DN-T1-E3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 7.7A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.3W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 Dual |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
The Products You May Be Interested In
|
Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 5.2A Rds On (Max) @ Id, Vgs 31mOhm @ 6A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 945pF @ 20V Power - Max 1.42W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101, PowerTrench® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 700mA, 600mA Rds On (Max) @ Id, Vgs 300mOhm @ 700mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 113pF @ 10V Power - Max 300mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-88 (SC-70-6) |
Manufacturer NXP USA Inc. Series - FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.5A Rds On (Max) @ Id, Vgs 70mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 380pF @ 10V Power - Max 520mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 6-UDFN Exposed Pad Supplier Device Package DFN2020-6 |
Manufacturer Sanken Series - FET Type 4 N-Channel (Half Bridge) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 5A Rds On (Max) @ Id, Vgs 300mOhm @ 3A, 4V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 320pF @ 10V Power - Max 4.8W Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case 15-SIP Exposed Tab, Formed Leads Supplier Device Package 15-ZIP |
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 6A (Ta), 14A (Tc) Rds On (Max) @ Id, Vgs 29mOhm @ 5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2110pF @ 30V Power - Max 1.2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
