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SI7904BDN-T1-GE3

SI7904BDN-T1-GE3

For Reference Only

Part Number SI7904BDN-T1-GE3
PNEDA Part # SI7904BDN-T1-GE3
Description MOSFET 2N-CH 20V 6A PPAK 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,608
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7904BDN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7904BDN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI7904BDN-T1-GE3, SI7904BDN-T1-GE3 Datasheet (Total Pages: 13, Size: 551.33 KB)
PDFSI7904BDN-T1-E3 Datasheet Cover
SI7904BDN-T1-E3 Datasheet Page 2 SI7904BDN-T1-E3 Datasheet Page 3 SI7904BDN-T1-E3 Datasheet Page 4 SI7904BDN-T1-E3 Datasheet Page 5 SI7904BDN-T1-E3 Datasheet Page 6 SI7904BDN-T1-E3 Datasheet Page 7 SI7904BDN-T1-E3 Datasheet Page 8 SI7904BDN-T1-E3 Datasheet Page 9 SI7904BDN-T1-E3 Datasheet Page 10 SI7904BDN-T1-E3 Datasheet Page 11

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SI7904BDN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6A
Rds On (Max) @ Id, Vgs30mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds860pF @ 10V
Power - Max17.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® 1212-8 Dual
Supplier Device PackagePowerPAK® 1212-8 Dual

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