Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI7860ADP-T1-GE3

SI7860ADP-T1-GE3

For Reference Only

Part Number SI7860ADP-T1-GE3
PNEDA Part # SI7860ADP-T1-GE3
Description MOSFET N-CH 30V 11A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,856
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Sep 25 - Sep 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7860ADP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7860ADP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7860ADP-T1-GE3, SI7860ADP-T1-GE3 Datasheet (Total Pages: 6, Size: 89.07 KB)
PDFSI7860ADP-T1-GE3 Datasheet Cover
SI7860ADP-T1-GE3 Datasheet Page 2 SI7860ADP-T1-GE3 Datasheet Page 3 SI7860ADP-T1-GE3 Datasheet Page 4 SI7860ADP-T1-GE3 Datasheet Page 5 SI7860ADP-T1-GE3 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI7860ADP-T1-GE3 Datasheet
  • where to find SI7860ADP-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI7860ADP-T1-GE3
  • SI7860ADP-T1-GE3 PDF Datasheet
  • SI7860ADP-T1-GE3 Stock

  • SI7860ADP-T1-GE3 Pinout
  • Datasheet SI7860ADP-T1-GE3
  • SI7860ADP-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI7860ADP-T1-GE3 Price
  • SI7860ADP-T1-GE3 Distributor

SI7860ADP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9.5mOhm @ 16A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

The Products You May Be Interested In

SI6415DQ-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

19mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-TSSOP

Package / Case

8-TSSOP (0.173", 4.40mm Width)

N0604N-S19-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

82A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 41A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4150pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta), 156W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220 Isolated Tab

Package / Case

TO-220-3 Isolated Tab

SPW20N60C3E8177FKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

NP60N04VUK-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.85mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3680pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta), 105W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

STP20NF06L

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

70mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 10V

Vgs (Max)

±18V

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 25V

FET Feature

-

Power Dissipation (Max)

60W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

ADA4805-2ARMZ-R7

ADA4805-2ARMZ-R7

Analog Devices

IC OPAMP GP 2 CIRCUIT 8MSOP

PIC18F25K22-I/SO

PIC18F25K22-I/SO

Microchip Technology

IC MCU 8BIT 32KB FLASH 28SOIC

STR-W6756

STR-W6756

Sanken

IC POWER QUASI RES SW TO-220F-6

7443320068

7443320068

Wurth Electronics

FIXED IND 680NH 26A 0.72 MOHM

IR2110PBF

IR2110PBF

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 14DIP

AT89C51ED2-SLSUM

AT89C51ED2-SLSUM

Microchip Technology

IC MCU 8BIT 64KB FLASH 44PLCC

74AC244SC

74AC244SC

ON Semiconductor

IC BUFFER NON-INVERT 6V 20SOIC

S558-5999-M8-F

S558-5999-M8-F

Bel Fuse

MODULE XFRMR LAN GIGABIT 24P SMD

LT3010EMS8E#TRPBF

LT3010EMS8E#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR POS ADJ 50MA 8MSOP

ADP122AUJZ-3.3-R7

ADP122AUJZ-3.3-R7

Analog Devices

IC REG LINEAR 3.3V 300MA TSOT5

LTM4625IY#PBF

LTM4625IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5.5V 5A

HSMF-C165

HSMF-C165

Broadcom

LED GREEN/RED DIFFUSED 0603 SMD