Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI7842DP-T1-E3

SI7842DP-T1-E3

For Reference Only

Part Number SI7842DP-T1-E3
PNEDA Part # SI7842DP-T1-E3
Description MOSFET 2N-CH 30V 6.3A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,532
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7842DP-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7842DP-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI7842DP-T1-E3, SI7842DP-T1-E3 Datasheet (Total Pages: 6, Size: 129.39 KB)
PDFSI7842DP-T1-GE3 Datasheet Cover
SI7842DP-T1-GE3 Datasheet Page 2 SI7842DP-T1-GE3 Datasheet Page 3 SI7842DP-T1-GE3 Datasheet Page 4 SI7842DP-T1-GE3 Datasheet Page 5 SI7842DP-T1-GE3 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI7842DP-T1-E3 Datasheet
  • where to find SI7842DP-T1-E3
  • Vishay Siliconix

  • Vishay Siliconix SI7842DP-T1-E3
  • SI7842DP-T1-E3 PDF Datasheet
  • SI7842DP-T1-E3 Stock

  • SI7842DP-T1-E3 Pinout
  • Datasheet SI7842DP-T1-E3
  • SI7842DP-T1-E3 Supplier

  • Vishay Siliconix Distributor
  • SI7842DP-T1-E3 Price
  • SI7842DP-T1-E3 Distributor

SI7842DP-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesLITTLE FOOT®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.3A
Rds On (Max) @ Id, Vgs22mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.4W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFET™, TrenchT2™

FET Type

2 N-Channel (Dual) Asymmetrical

FET Feature

Standard

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

120A

Rds On (Max) @ Id, Vgs

5.8mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

178nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

10500pF @ 25V

Power - Max

170W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

ISOPLUSi5-Pak™

Supplier Device Package

ISOPLUS i4-PAC™

2N7002PV,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

350mA

Rds On (Max) @ Id, Vgs

1.6Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 10V

Power - Max

330mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-666

SI4505DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V, 8V

Current - Continuous Drain (Id) @ 25°C

6A, 3.8A

Rds On (Max) @ Id, Vgs

18mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id

1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

FDME1023PZT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.6A

Rds On (Max) @ Id, Vgs

142mOhm @ 2.3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.7nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

405pF @ 10V

Power - Max

600mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-UFDFN Exposed Pad

Supplier Device Package

6-MicroFET (1.6x1.6)

APTMC60TLM14CAG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

4 N-Channel (Three Level Inverter)

FET Feature

Silicon Carbide (SiC)

Drain to Source Voltage (Vdss)

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C

219A (Tc)

Rds On (Max) @ Id, Vgs

12mOhm @ 150A, 20V

Vgs(th) (Max) @ Id

2.4V @ 30mA (Typ)

Gate Charge (Qg) (Max) @ Vgs

483nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds

8400pF @ 1000V

Power - Max

925W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP6

Supplier Device Package

SP6

Recently Sold

AD8622ARZ

AD8622ARZ

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

TAJB475K016RNJ

TAJB475K016RNJ

CAP TANT 4.7UF 10% 16V 1411

LM2901DR

LM2901DR

Rohm Semiconductor

IC COMPARATOR QUAD GP 14-SOIC

LM324N

LM324N

ON Semiconductor

IC OPAMP GP 4 CIRCUIT 14DIP

LFXP2-17E-6FTN256I

LFXP2-17E-6FTN256I

Lattice Semiconductor Corporation

IC FPGA 201 I/O 256FTBGA

TNY278PN

TNY278PN

Power Integrations

IC OFFLINE SWIT OVP OTP HV 8DIP

S558-5999-M8-F

S558-5999-M8-F

Bel Fuse

MODULE XFRMR LAN GIGABIT 24P SMD

RB481KTL

RB481KTL

Rohm Semiconductor

DIODE ARRAY SCHOTTKY 30V UMD4

MC14066BDG

MC14066BDG

ON Semiconductor

IC MULTIPLEXER QUAD 4X1 14SOIC

PIC32MX795F512L-80I/PT

PIC32MX795F512L-80I/PT

Microchip Technology

IC MCU 32BIT 512KB FLASH 100TQFP

SMAJ24A

SMAJ24A

Littelfuse

TVS DIODE 24V 38.9V DO214AC

LTV-352T

LTV-352T

Lite-On Inc.

OPTOISO 3.75KV DARLINGTON 4SOP