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SI7810DN-T1-GE3

SI7810DN-T1-GE3

For Reference Only

Part Number SI7810DN-T1-GE3
PNEDA Part # SI7810DN-T1-GE3
Description MOSFET N-CH 100V 3.4A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,858
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7810DN-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7810DN-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7810DN-T1-GE3, SI7810DN-T1-GE3 Datasheet (Total Pages: 5, Size: 70.66 KB)
PDFSI7810DN-T1-GE3 Datasheet Cover
SI7810DN-T1-GE3 Datasheet Page 2 SI7810DN-T1-GE3 Datasheet Page 3 SI7810DN-T1-GE3 Datasheet Page 4 SI7810DN-T1-GE3 Datasheet Page 5

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SI7810DN-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs62mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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