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SI7794DP-T1-GE3

SI7794DP-T1-GE3

For Reference Only

Part Number SI7794DP-T1-GE3
PNEDA Part # SI7794DP-T1-GE3
Description MOSFET N-CH 30V P-PACK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,536
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7794DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7794DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7794DP-T1-GE3, SI7794DP-T1-GE3 Datasheet (Total Pages: 13, Size: 337.22 KB)
PDFSI7794DP-T1-GE3 Datasheet Cover
SI7794DP-T1-GE3 Datasheet Page 2 SI7794DP-T1-GE3 Datasheet Page 3 SI7794DP-T1-GE3 Datasheet Page 4 SI7794DP-T1-GE3 Datasheet Page 5 SI7794DP-T1-GE3 Datasheet Page 6 SI7794DP-T1-GE3 Datasheet Page 7 SI7794DP-T1-GE3 Datasheet Page 8 SI7794DP-T1-GE3 Datasheet Page 9 SI7794DP-T1-GE3 Datasheet Page 10 SI7794DP-T1-GE3 Datasheet Page 11

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SI7794DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesSkyFET®, TrenchFET® Gen III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C28.6A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2.52nF @ 15V
FET FeatureSchottky Diode (Body)
Power Dissipation (Max)5W (Ta), 48W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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