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SI7392ADP-T1-E3

SI7392ADP-T1-E3

For Reference Only

Part Number SI7392ADP-T1-E3
PNEDA Part # SI7392ADP-T1-E3
Description MOSFET N-CH 30V 30A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,528
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7392ADP-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7392ADP-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7392ADP-T1-E3, SI7392ADP-T1-E3 Datasheet (Total Pages: 7, Size: 96.97 KB)
PDFSI7392ADP-T1-GE3 Datasheet Cover
SI7392ADP-T1-GE3 Datasheet Page 2 SI7392ADP-T1-GE3 Datasheet Page 3 SI7392ADP-T1-GE3 Datasheet Page 4 SI7392ADP-T1-GE3 Datasheet Page 5 SI7392ADP-T1-GE3 Datasheet Page 6 SI7392ADP-T1-GE3 Datasheet Page 7

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SI7392ADP-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1465pF @ 15V
FET Feature-
Power Dissipation (Max)5W (Ta), 27.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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