Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI7252DP-T1-GE3

SI7252DP-T1-GE3

For Reference Only

Part Number SI7252DP-T1-GE3
PNEDA Part # SI7252DP-T1-GE3
Description MOSFET 2N-CH 100V 36.7A PPAK 8SO
Manufacturer Vishay Siliconix
Unit Price $31.6656
In Stock 0
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7252DP-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7252DP-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI7252DP-T1-GE3, SI7252DP-T1-GE3 Datasheet (Total Pages: 13, Size: 378.12 KB)
PDFSI7252DP-T1-GE3 Datasheet Cover
SI7252DP-T1-GE3 Datasheet Page 2 SI7252DP-T1-GE3 Datasheet Page 3 SI7252DP-T1-GE3 Datasheet Page 4 SI7252DP-T1-GE3 Datasheet Page 5 SI7252DP-T1-GE3 Datasheet Page 6 SI7252DP-T1-GE3 Datasheet Page 7 SI7252DP-T1-GE3 Datasheet Page 8 SI7252DP-T1-GE3 Datasheet Page 9 SI7252DP-T1-GE3 Datasheet Page 10 SI7252DP-T1-GE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI7252DP-T1-GE3 Datasheet
  • where to find SI7252DP-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI7252DP-T1-GE3
  • SI7252DP-T1-GE3 PDF Datasheet
  • SI7252DP-T1-GE3 Stock

  • SI7252DP-T1-GE3 Pinout
  • Datasheet SI7252DP-T1-GE3
  • SI7252DP-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI7252DP-T1-GE3 Price
  • SI7252DP-T1-GE3 Distributor

SI7252DP-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C36.7A
Rds On (Max) @ Id, Vgs18mOhm @ 15A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1170pF @ 50V
Power - Max46W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

The Products You May Be Interested In

IRF7507TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.4A, 1.7A

Rds On (Max) @ Id, Vgs

140mOhm @ 1.7A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

260pF @ 15V

Power - Max

1.25W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Supplier Device Package

Micro8™

2N7334

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

4 N-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1A

Rds On (Max) @ Id, Vgs

700mOhm @ 600mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.4W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

14-DIP (0.300", 7.62mm)

Supplier Device Package

MO-036AB

SH8K4TB1

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A

Rds On (Max) @ Id, Vgs

17mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

1190pF @ 10V

Power - Max

2W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOP

SI7948DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

3A

Rds On (Max) @ Id, Vgs

75mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

1.4W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8 Dual

Supplier Device Package

PowerPAK® SO-8 Dual

DMN2041LSD-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

7.63A

Rds On (Max) @ Id, Vgs

28mOhm @ 6A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15.6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

550pF @ 10V

Power - Max

1.16W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

Recently Sold

HSMS-2862-TR1G

HSMS-2862-TR1G

Broadcom

RF DIODE SCHOTTKY 4V SOT23-3

UUX1E470MCL1GS

UUX1E470MCL1GS

Nichicon

CAP ALUM 47UF 20% 25V SMD

EDF1DS-E3/77

EDF1DS-E3/77

Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 200V 1A DFS

ISL62882CHRTZ

ISL62882CHRTZ

Renesas Electronics America Inc.

IC REG CONV INTEL 1OUT 40TQFN

1N5254B

1N5254B

ON Semiconductor

DIODE ZENER 27V 500MW DO35

B560C-13-F

B560C-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 5A SMC

ZTB800J

ZTB800J

ECS

CER RES 800.0000KHZ T/H

TZB4R500AB10R00

TZB4R500AB10R00

Murata

CAP TRIMMER 7-50PF 50V SMD

WSL2512R0500FEA

WSL2512R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1W 2512

LTM4625IY#PBF

LTM4625IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5.5V 5A

SHT11

SHT11

Sensirion AG

SENSOR HUMID/TEMP 5V DTL 3% SMD

CDBHD1100L-G

CDBHD1100L-G

Comchip Technology

BRIDGE RECT 1P 100V 1A MINI-DIP