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SI7117DN-T1-E3

SI7117DN-T1-E3

For Reference Only

Part Number SI7117DN-T1-E3
PNEDA Part # SI7117DN-T1-E3
Description MOSFET P-CH 150V 2.17A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 55,080
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI7117DN-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI7117DN-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI7117DN-T1-E3, SI7117DN-T1-E3 Datasheet (Total Pages: 13, Size: 603.01 KB)
PDFSI7117DN-T1-GE3 Datasheet Cover
SI7117DN-T1-GE3 Datasheet Page 2 SI7117DN-T1-GE3 Datasheet Page 3 SI7117DN-T1-GE3 Datasheet Page 4 SI7117DN-T1-GE3 Datasheet Page 5 SI7117DN-T1-GE3 Datasheet Page 6 SI7117DN-T1-GE3 Datasheet Page 7 SI7117DN-T1-GE3 Datasheet Page 8 SI7117DN-T1-GE3 Datasheet Page 9 SI7117DN-T1-GE3 Datasheet Page 10 SI7117DN-T1-GE3 Datasheet Page 11

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SI7117DN-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C2.17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds510pF @ 25V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 12.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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