Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI6963BDQ-T1-GE3

SI6963BDQ-T1-GE3

For Reference Only

Part Number SI6963BDQ-T1-GE3
PNEDA Part # SI6963BDQ-T1-GE3
Description MOSFET 2P-CH 20V 3.4A 8-TSSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,870
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI6963BDQ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI6963BDQ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI6963BDQ-T1-GE3, SI6963BDQ-T1-GE3 Datasheet (Total Pages: 6, Size: 103.17 KB)
PDFSI6963BDQ-T1-GE3 Datasheet Cover
SI6963BDQ-T1-GE3 Datasheet Page 2 SI6963BDQ-T1-GE3 Datasheet Page 3 SI6963BDQ-T1-GE3 Datasheet Page 4 SI6963BDQ-T1-GE3 Datasheet Page 5 SI6963BDQ-T1-GE3 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI6963BDQ-T1-GE3 Datasheet
  • where to find SI6963BDQ-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI6963BDQ-T1-GE3
  • SI6963BDQ-T1-GE3 PDF Datasheet
  • SI6963BDQ-T1-GE3 Stock

  • SI6963BDQ-T1-GE3 Pinout
  • Datasheet SI6963BDQ-T1-GE3
  • SI6963BDQ-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI6963BDQ-T1-GE3 Price
  • SI6963BDQ-T1-GE3 Distributor

SI6963BDQ-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.4A
Rds On (Max) @ Id, Vgs45mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max830mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

The Products You May Be Interested In

EPC2106

EPC

Manufacturer

EPC

Series

eGaN®

FET Type

2 N-Channel (Half Bridge)

FET Feature

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1.7A

Rds On (Max) @ Id, Vgs

70mOhm @ 2A, 5V

Vgs(th) (Max) @ Id

2.5V @ 600µA

Gate Charge (Qg) (Max) @ Vgs

0.73nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

75pF @ 50V

Power - Max

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die

APTMC120AM08CD3AG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

2 N-Channel (Half Bridge)

FET Feature

Silicon Carbide (SiC)

Drain to Source Voltage (Vdss)

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C

250A (Tc)

Rds On (Max) @ Id, Vgs

10mOhm @ 200A, 20V

Vgs(th) (Max) @ Id

2.2V @ 10mA (Typ)

Gate Charge (Qg) (Max) @ Vgs

490nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds

9500pF @ 1000V

Power - Max

1100W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

D-3 Module

Supplier Device Package

D3

AO8810

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

2 N-Channel (Dual) Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

7A

Rds On (Max) @ Id, Vgs

20mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1295pF @ 10V

Power - Max

1.5W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

8-TSSOP

IRF7329PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

9.2A

Rds On (Max) @ Id, Vgs

17mOhm @ 9.2A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

57nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

3450pF @ 10V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

TSM680P06DPQ56 RLG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

2 P-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Rds On (Max) @ Id, Vgs

68mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

870pF @ 30V

Power - Max

3.5W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

8-PDFN (5x6)

Recently Sold

MBR0540-TP

MBR0540-TP

Micro Commercial Co

DIODE SCHOTTKY 40V 500MA SOD123

74HC14DR2G

74HC14DR2G

ON Semiconductor

IC INVERTER SCHMITT 6CH 14SOIC

SSM2166SZ

SSM2166SZ

Analog Devices

IC PREAMP AUDIO MONO MIC 14SOIC

LC4064V-75TN100C

LC4064V-75TN100C

Lattice Semiconductor Corporation

IC CPLD 64MC 7.5NS 100TQFP

PLA10AN3630R3D2B

PLA10AN3630R3D2B

Murata

COMMON MODE CHOKE 300MA 2LN TH

M74HC42B1R

M74HC42B1R

STMicroelectronics

IC DECODER BCD TO DECIMAL 16-DIP

VLMRGB343-ST-UV-RS

VLMRGB343-ST-UV-RS

Vishay Semiconductor Opto Division

LED RGB 4PLCC SMD

7443556350

7443556350

Wurth Electronics

FIXED IND 3.5UH 22.5A 3.1 MOHM

AD826AR

AD826AR

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

FT232RL-REEL

FT232RL-REEL

FTDI, Future Technology Devices International Ltd

IC USB FS SERIAL UART 28-SSOP

PCMB063T-3R3MS

PCMB063T-3R3MS

Susumu

FIXED IND 3.3UH 6A 30 MOHM SMD

CDSOT23-T24CAN

CDSOT23-T24CAN

Bourns

TVS DIODE 24V 40V SOT23