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SI6473DQ-T1-E3

SI6473DQ-T1-E3

For Reference Only

Part Number SI6473DQ-T1-E3
PNEDA Part # SI6473DQ-T1-E3
Description MOSFET P-CH 20V 6.2A 8-TSSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,282
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI6473DQ-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI6473DQ-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI6473DQ-T1-E3, SI6473DQ-T1-E3 Datasheet (Total Pages: 5, Size: 101.98 KB)
PDFSI6473DQ-T1-GE3 Datasheet Cover
SI6473DQ-T1-GE3 Datasheet Page 2 SI6473DQ-T1-GE3 Datasheet Page 3 SI6473DQ-T1-GE3 Datasheet Page 4 SI6473DQ-T1-GE3 Datasheet Page 5

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SI6473DQ-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs12.5mOhm @ 9.5A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs70nC @ 5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.08W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSSOP
Package / Case8-TSSOP (0.173", 4.40mm Width)

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