SI6467BDQ-T1-GE3
For Reference Only
| Part Number | SI6467BDQ-T1-GE3 |
| PNEDA Part # | SI6467BDQ-T1-GE3 |
| Description | MOSFET P-CH 12V 6.8A 8TSSOP |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 5,454 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 3 - Apr 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI6467BDQ-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI6467BDQ-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI6467BDQ-T1-GE3 Datasheet
- where to find SI6467BDQ-T1-GE3
- Vishay Siliconix
- Vishay Siliconix SI6467BDQ-T1-GE3
- SI6467BDQ-T1-GE3 PDF Datasheet
- SI6467BDQ-T1-GE3 Stock
- SI6467BDQ-T1-GE3 Pinout
- Datasheet SI6467BDQ-T1-GE3
- SI6467BDQ-T1-GE3 Supplier
- Vishay Siliconix Distributor
- SI6467BDQ-T1-GE3 Price
- SI6467BDQ-T1-GE3 Distributor
SI6467BDQ-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 8A, 4.5V |
| Vgs(th) (Max) @ Id | 850mV @ 450µA |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 4.5V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | 1.05W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSSOP |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series PowerTrench® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 30mOhm @ 6.8A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 10V FET Feature - Power Dissipation (Max) 1.92W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-MLP, MicroFET (3x2) Package / Case 8-SMD, Flat Lead Exposed Pad |
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 4.2mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 123nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 17130pF @ 25V FET Feature - Power Dissipation (Max) 349W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer Infineon Technologies Series SIPMOS® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8Ohm @ 170mA, 10V Vgs(th) (Max) @ Id 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 19pF @ 25V FET Feature - Power Dissipation (Max) 360mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 42mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 720pF @ 30V FET Feature - Power Dissipation (Max) 5W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6 |
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 240A (Tc) Drive Voltage (Max Rds On, Min Rds On) 8V, 10V Rds On (Max) @ Id, Vgs 2.2mOhm @ 30A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 15400pF @ 40V FET Feature - Power Dissipation (Max) 3.8W (Ta), 214W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263-7 Package / Case TO-263-7, D²Pak (6 Leads + Tab) |
