Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI5484DU-T1-GE3

SI5484DU-T1-GE3

For Reference Only

Part Number SI5484DU-T1-GE3
PNEDA Part # SI5484DU-T1-GE3
Description MOSFET N-CH 20V 12A PPAK CHIPFET
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,706
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Dec 20 - Dec 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5484DU-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5484DU-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI5484DU-T1-GE3, SI5484DU-T1-GE3 Datasheet (Total Pages: 7, Size: 138.16 KB)
PDFSI5484DU-T1-GE3 Datasheet Cover
SI5484DU-T1-GE3 Datasheet Page 2 SI5484DU-T1-GE3 Datasheet Page 3 SI5484DU-T1-GE3 Datasheet Page 4 SI5484DU-T1-GE3 Datasheet Page 5 SI5484DU-T1-GE3 Datasheet Page 6 SI5484DU-T1-GE3 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI5484DU-T1-GE3 Datasheet
  • where to find SI5484DU-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI5484DU-T1-GE3
  • SI5484DU-T1-GE3 PDF Datasheet
  • SI5484DU-T1-GE3 Stock

  • SI5484DU-T1-GE3 Pinout
  • Datasheet SI5484DU-T1-GE3
  • SI5484DU-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI5484DU-T1-GE3 Price
  • SI5484DU-T1-GE3 Distributor

SI5484DU-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs16mOhm @ 7.6A, 4.5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 31W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® ChipFet Single
Package / CasePowerPAK® ChipFET™ Single

The Products You May Be Interested In

SI4410DY

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1350pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

BSC042N03ST

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

20A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3660pF @ 15V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-5

Package / Case

8-PowerTDFN

SI3447BDV-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

40mOhm @ 6A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

SI5433BDC-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

37mOhm @ 4.8A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

1206-8 ChipFET™

Package / Case

8-SMD, Flat Lead

STU11NM60ND

STMicroelectronics

Manufacturer

STMicroelectronics

Series

FDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

450mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

850pF @ 50V

FET Feature

-

Power Dissipation (Max)

90W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

EDZVT2R16B

EDZVT2R16B

Rohm Semiconductor

DIODE ZENER 16V 150MW EMD2

WSL2010R0100FEA

WSL2010R0100FEA

Vishay Dale

RES 0.01 OHM 1% 1/2W 2010

EP1C20F324C7

EP1C20F324C7

Intel

IC FPGA 233 I/O 324FBGA

ECA-2AM470

ECA-2AM470

Panasonic Electronic Components

CAP ALUM 47UF 20% 100V RADIAL

AQY272A

AQY272A

Panasonic Electric Works

SSR RELAY SPST-NO 2A 0-60V

LBM2016T330J

LBM2016T330J

Taiyo Yuden

FIXED IND 33UH 125MA 3.6 OHM SMD

CY62187EV30LL-55BAXI

CY62187EV30LL-55BAXI

Cypress Semiconductor

IC SRAM 64M PARALLEL 48FBGA

BMI160

BMI160

Bosch Sensortec

IMU ACCEL/GYRO I2C/SPI 14LGA

ADA4805-2ARMZ-R7

ADA4805-2ARMZ-R7

Analog Devices

IC OPAMP GP 2 CIRCUIT 8MSOP

NC7SZ19P6X

NC7SZ19P6X

ON Semiconductor

IC DECODER/DEMUX UHS 1OF2 SC70-6

74HCT32D

74HCT32D

Toshiba Semiconductor and Storage

IC GATE OR 4CH 2-INP 14SOIC

1SS355TE-17

1SS355TE-17

Rohm Semiconductor

DIODE GEN PURP 80V 100MA UMD2